PART |
Description |
Maker |
KLT-231412 |
1310nm InGaAsP strained MQW DFB LD for 1.25G 2.0 TO CAN
|
KODENSHI KOREA CORP.
|
KLT-231444 |
1310nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN
|
KODENSHI KOREA CORP.
|
KLT-155454 |
1550nm InGaAsP strained MQW FP-LD
|
KODENSHI KOREA CORP.
|
NDL7910P NX8562LB |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
|
NEC
|
NDL7910P NDL7701P NDL7620P NX8563LB525-CA NX8563LB |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS
|
NEC
|
NX7303CA-CC NX7303BA-CC NX7303BA |
InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s APPLICATION 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s APPLICATION 1310 nm InGaAsP MQW FP laser diode for 155 Mb/s applications. With SC-UPC connector. Vertical mount flange.
|
http:// CEL[California Eastern Labs] NEC
|
NX8303CG-CC NX8303BG-CC NX8303BG |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE NECs 1310 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 622 Mb/s APPLICATION
|
CEL[California Eastern Labs] http://
|
ML725B45F ML725C45F ML7XX45 ML720Y45S ML720J45S ML |
1310nm InGaAsP FP LASER DIODES 1310 InGaAsP的FP激光二极管
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|